STN4NF03L Datasheet and Replacement
Type Designator: STN4NF03L
Marking Code: 4NF03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.5 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT223
STN4NF03L substitution
STN4NF03L Datasheet (PDF)
stn4nf03l.pdf
STN4NF03LN-channel 30 V - 0.039 - 6.5 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID2STN4NF03L 30 V
stn4nf03l.pdf
STN4NF03Lwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PAR
stn4nf06l.pdf
STN4NF06LN-channel 60 V - 0.07 - 4 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) max IDSTN4NF06L 60 V
stn4nf20l.pdf
STN4NF20LN-channel 200 V, 1.1 , 1 A SOT-223low gate charge STripFET II Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.2STN4NF20L 200 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - STN4NF03L MOSFET datasheet
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