STN4NF06L Datasheet and Replacement
Type Designator: STN4NF06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
STN4NF06L substitution
STN4NF06L Datasheet (PDF)
stn4nf06l.pdf
STN4NF06LN-channel 60 V - 0.07 - 4 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) max IDSTN4NF06L 60 V
stn4nf03l.pdf
STN4NF03LN-channel 30 V - 0.039 - 6.5 A - SOT-223STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID2STN4NF03L 30 V
stn4nf03l.pdf
STN4NF03Lwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PAR
stn4nf20l.pdf
STN4NF20LN-channel 200 V, 1.1 , 1 A SOT-223low gate charge STripFET II Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.2STN4NF20L 200 V
Datasheet: STN1NK80Z , STN2NF10 , STN3N40K3 , STN3N45K3 , STN3NF06 , STN3NF06L , STN3PF06 , STN4NF03L , IRF640 , STN4NF20L , STP100NF04 , STP10N62K3 , STP10NK60Z , STP10NK70Z , STP10NK70ZFP , STP10NK80Z , STP10NK80ZFP .
History: IXFH15N100P | HTJ300N02 | OSG60R180HF | HM20N06 | BLP042N10G-P | SM4600CSK | IRF5M5210
Keywords - STN4NF06L MOSFET datasheet
STN4NF06L cross reference
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History: IXFH15N100P | HTJ300N02 | OSG60R180HF | HM20N06 | BLP042N10G-P | SM4600CSK | IRF5M5210
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