STP11NM60FD MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

STP11NM60FD Specs and Replacement

   Type Designator: STP11NM60FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220

STP11NM60FD substitution

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STP11NM60FD datasheet

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STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STP11NM60FD 600 V ... See More ⇒

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STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V ... See More ⇒

0.1. Size:486K st
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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V ... See More ⇒