STP11NM60FD Datasheet and Replacement
Type Designator: STP11NM60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220
STP11NM60FD substitution
STP11NM60FD Datasheet (PDF)
stp11nm60fd.pdf

STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
Datasheet: STP10NM65N , STP11N52K3 , STP11NK40Z , STP11NK40ZFP , STP11NK50Z , STP11NK50ZFP , STP11NM50N , STP11NM60 , K3569 , STP11NM60ND , STP11NM80 , STP120N4F6 , STP120NF04 , STP120NF10 , STP12N120K5 , STP12N65M5 , STP12NK30Z .
History: IPD034N06N3 | IXFK170N20P
Keywords - STP11NM60FD MOSFET datasheet
STP11NM60FD cross reference
STP11NM60FD equivalent finder
STP11NM60FD lookup
STP11NM60FD substitution
STP11NM60FD replacement
History: IPD034N06N3 | IXFK170N20P



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