All MOSFET. APT20M26WVR Datasheet

 

APT20M26WVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M26WVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 450 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 290 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 1950 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO267

APT20M26WVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M26WVR Datasheet (PDF)

1.1. apt20m26wvr.pdf Size:63K _apt

APT20M26WVR
APT20M26WVR

APT20M26WVR 200V 65A 0.026Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

3.1. apt20m20b2llg apt20m20lllg.pdf Size:160K _update_mosfet

APT20M26WVR
APT20M26WVR

APT20M20B2LL APT20M20LLL Ω 200V 100A 0.020Ω Ω Ω Ω R POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along wi

3.2. apt20m20b2fllg apt20m20lfllg.pdf Size:157K _update_mosfet

APT20M26WVR
APT20M26WVR

APT20M20B2FLL APT20M20LFLL Ω 200V 100A 0.020Ω Ω Ω Ω R FREDFET POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching loss

 3.3. apt20m20b2llg apt20m20lllg.pdf Size:160K _apt

APT20M26WVR
APT20M26WVR

APT20M20B2LL APT20M20LLL Ω 200V 100A 0.020Ω Ω Ω Ω R POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along wi

3.4. apt20m20b2fllg apt20m20lfllg.pdf Size:157K _apt

APT20M26WVR
APT20M26WVR

APT20M20B2FLL APT20M20LFLL Ω 200V 100A 0.020Ω Ω Ω Ω R FREDFET POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching loss

 3.5. apt20m22lvfr.pdf Size:66K _apt

APT20M26WVR
APT20M26WVR

APT20M22LVFR 200V 100A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

3.6. apt20m22jvr.pdf Size:71K _apt

APT20M26WVR
APT20M26WVR

APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.7. apt20m20b2ll.pdf Size:69K _apt

APT20M26WVR
APT20M26WVR

APT20M20B2LL APT20M20LLL 200V 100A 0.020W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

3.8. apt20m20jll.pdf Size:60K _apt

APT20M26WVR
APT20M26WVR

APT20M20JLL 200V 106A 0.020 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.9. apt20m22jvfr.pdf Size:73K _apt

APT20M26WVR
APT20M26WVR

APT20M22JVFR 200V 97A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

3.10. apt20m20jfll.pdf Size:62K _apt

APT20M26WVR
APT20M26WVR

APT20M20JFLL 200V 106A 0.020W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

3.11. apt20m22b2vfr.pdf Size:64K _apt

APT20M26WVR
APT20M26WVR

APT20M22B2VFR 200V 100A 0.022Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanch

3.12. apt20m22.pdf Size:71K _apt

APT20M26WVR
APT20M26WVR

APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.13. apt20m22b2vr.pdf Size:63K _apt

APT20M26WVR
APT20M26WVR

APT20M22B2VR 200V 100A 0.022Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • L

3.14. apt20m22lvr.pdf Size:64K _apt

APT20M26WVR
APT20M26WVR

APT20M22LVR 200V 100A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Low

3.15. apt20m20b2fll.pdf Size:71K _apt

APT20M26WVR
APT20M26WVR

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

Datasheet: APT20M13PVR , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , 2SK4106 , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR , APT20M42HVR , APT20M45BVFR , APT20M45BVR , APT20M45SVFR .

 

 
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