APT20M38BVR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M38BVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 67 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 148 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 1145 pF
Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
Package: TO247
APT20M38BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M38BVR Datasheet (PDF)
apt20m38bvr.pdf
APT20M38BVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt20m38bvr.pdf
isc N-Channel MOSFET Transistor APT20M38BVRFEATURESDrain Current I =67A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.038(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt20m38bvfr.pdf
APT20M38BVFR200V 67A 0.038POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt20m38svfrg.pdf
200V 67A 0.038APT20M38BVFR APT20M38SVFRAPT20M38BVFRG* APT20M38SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRPOWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power
apt20m38svr.pdf
APT20M38SVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
Datasheet: APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , AO4466 , APT20M38SVR , APT20M40BVR , APT20M42HVR , APT20M45BVFR , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR .
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