APT20M38BVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT20M38BVR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 370 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 67 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 148 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 1145 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.038 Ohm
Тип корпуса: TO247
Аналог (замена) для APT20M38BVR
APT20M38BVR Datasheet (PDF)
apt20m38bvr.pdf
APT20M38BVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt20m38bvr.pdf
isc N-Channel MOSFET Transistor APT20M38BVRFEATURESDrain Current I =67A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.038(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt20m38bvfr.pdf
APT20M38BVFR200V 67A 0.038POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt20m38svfrg.pdf
200V 67A 0.038APT20M38BVFR APT20M38SVFRAPT20M38BVFRG* APT20M38SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRPOWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power
apt20m38svr.pdf
APT20M38SVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
Другие MOSFET... APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , 60N06 , APT20M38SVR , APT20M40BVR , APT20M42HVR , APT20M45BVFR , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR .
