All MOSFET. STP18NM60N Datasheet

 

STP18NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP18NM60N
   Marking Code: 18NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm
   Package: TO220

 STP18NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP18NM60N Datasheet (PDF)

 ..1. Size:995K  st
stb18nm60n stf18nm60n sti18nm60n stp18nm60n stw18nm60n.pdf

STP18NM60N STP18NM60N

STB18NM60N, STF18NM60N, STI18NM60NSTP18NM60N, STW18NM60NN-channel 600 V, 0.27 , 13 A MDmesh II Power MOSFETin TO-220, TO-220FP, TO-247, DPAK and IPAKFeaturesVDSS RDS(on) Order codes ID PW(@Tjmax) max.3312STB18NM60N 110 W 1DPAKSTF18NM60N 30 WTO-24732STI18NM60N 650 V

 ..2. Size:1158K  st
stb18nm60n stf18nm60n stp18nm60n stw18nm60n.pdf

STP18NM60N STP18NM60N

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60NN-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS RDS(on) Order codes ID PTOT(@Tjmax) max.3132STB18NM60N 110 W1DPAKSTF18NM60N 30 WTO-220FP650 V

 0.1. Size:1417K  st
stb18nm60nd stf18nm60nd stp18nm60nd stw18nm60nd.pdf

STP18NM60N STP18NM60N

STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60NDN-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) IDOrder codes3TJmaxmax132STB18NM60NDD2PAK 1TO-220FPSTF18NM60ND650 V

 7.1. Size:963K  st
stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf

STP18NM60N STP18NM60N

STB18NM80, STF18NM80STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max33 22 1STB18NM80 800 V

 7.2. Size:1048K  st
stb18nm80 stf18nm80 stp18nm80 stw18nm80.pdf

STP18NM60N STP18NM60N

STB18NM80, STF18NM80, STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max ID3321STB18NM80 800 V

 7.3. Size:205K  inchange semiconductor
stp18nm80.pdf

STP18NM60N STP18NM60N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP18NM80FEATURESTypical R (on)=0.25DSLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMS04N10TS

 

 
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