STP18NM80 Datasheet: MOSFET, N-Ch, 800V, 17A. Full specification with pinout and replacement list

STP18NM80 Datasheet. Specs and Replacement

Type Designator: STP18NM80 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm

Package: TO220

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STP18NM80 substitution

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STP18NM80 datasheet

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STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STB18NM80 800 V ... See More ⇒

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STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features RDS(on) Order codes VDSS max ID 3 3 2 1 STB18NM80 800 V ... See More ⇒

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP18NM80 FEATURES Typical R (on)=0.25 DS Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB VDSS @ RDS(on) ID Order codes 3 TJmax max 1 3 2 STB18NM60ND D2PAK 1 TO-220FP STF18NM60ND 650 V ... See More ⇒