STP20NM60 Specs and Replacement
Type Designator: STP20NM60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220
STP20NM60 substitution
- MOSFET ⓘ Cross-Reference Search
STP20NM60 datasheet
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf
STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒
stp20nm60.pdf
STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP20NM60 600 V ... See More ⇒
stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf
STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒
stp20nm60.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP20NM60 FEATURES Typical R (on)=0.25 DS Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for increasing power density of high voltage converters allowing system miniat... See More ⇒
Detailed specifications: STP200NF04L, STP20N95K5, STP20NF06, STP20NF06L, STP20NF20, STP20NK50Z, STP20NM50, STP20NM50FD, AOD4184A, STP20NM60FD, STP20NM60FP, STP20NM65N, STP210N75F6, STP21N65M5, STP21N90K5, STP21NM60ND, STP22NF03L
Keywords - STP20NM60 MOSFET specs
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