STP20NM60 Datasheet and Replacement
Type Designator: STP20NM60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220
STP20NM60 substitution
STP20NM60 Datasheet (PDF)
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stp20nm60.pdf

STP20NM60 - STP20NM60FPSTB20NM60 STB20NM60-1N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM60 600 V
stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stp20nm60.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20NM60FEATURESTypical R (on)=0.25DSLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for increasing power density of high voltage convertersallowing system miniat
Datasheet: STP200NF04L , STP20N95K5 , STP20NF06 , STP20NF06L , STP20NF20 , STP20NK50Z , STP20NM50 , STP20NM50FD , HY1906P , STP20NM60FD , STP20NM60FP , STP20NM65N , STP210N75F6 , STP21N65M5 , STP21N90K5 , STP21NM60ND , STP22NF03L .
History: PSMN8R5-108ES | FCHD125N65S3R0 | IRF9243 | VB2290A | NCE6050KA | STB11NM60 | R5019ANX
Keywords - STP20NM60 MOSFET datasheet
STP20NM60 cross reference
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STP20NM60 substitution
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History: PSMN8R5-108ES | FCHD125N65S3R0 | IRF9243 | VB2290A | NCE6050KA | STB11NM60 | R5019ANX



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