STP28NM50N MOSFET. Datasheet pdf. Equivalent
Type Designator: STP28NM50N
Marking Code: 28NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 122 pF
Maximum Drain-Source On-State Resistance (Rds): 0.158 Ohm
Package: TO220
STP28NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP28NM50N Datasheet (PDF)
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