STP30NM50N Datasheet and Replacement
Type Designator: STP30NM50N
Marking Code: 30NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 94 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TO220
STP30NM50N substitution
STP30NM50N Datasheet (PDF)
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V
stp30nm30n.pdf

STP30NM30NN-channel 300V - 0.078 - 30A - TO-220Ultra low gate charge MDmesh II Power MOSFETFeaturesType VDSS RDS(on) IDSTP30NM30N 300V
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IPP60R074C6
Keywords - STP30NM50N MOSFET datasheet
STP30NM50N cross reference
STP30NM50N equivalent finder
STP30NM50N lookup
STP30NM50N substitution
STP30NM50N replacement
History: IPP60R074C6



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