STP30NM50N MOSFET Datasheet: N-Ch, 500V, 27A. Full specification with pinout and replacement list

STP30NM50N Specs and Replacement

   Type Designator: STP30NM50N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO220

STP30NM50N substitution

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STP30NM50N datasheet

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STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) VDSS Type ID (@Tjmax) max 3 3 1 2 1 STB30NM50N 550 V ... See More ⇒

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STP30NM30N N-channel 300V - 0.078 - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS(on) ID STP30NM30N 300V ... See More ⇒

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stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf pdf_icon

STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V ... See More ⇒

7.3. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf pdf_icon