STP35N65M5 Datasheet. Specs and Replacement

Type Designator: STP35N65M5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm

Package: TO220

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STP35N65M5 substitution

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STP35N65M5 datasheet

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STP35N65M5

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V ... See More ⇒

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STP35N65M5

STB35NF10 STP35NF10 N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB35NF10 100V ... See More ⇒

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STP35N65M5

STP35NF10 STB35NF10 N-CHANNEL 100V - 0.030 - 40ATO-220/ D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP35NF10 100 V ... See More ⇒

 8.3. Size:134K  samhop
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STP35N65M5

Green Product STP35N10 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (m ) Typ High power and current handling capability. 100V 35A 30 @ VGS=10V TO-220 package. D G STP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unl... See More ⇒

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Detailed specifications: STP30NF20, STP30NM30N, STP30NM50N, STP30NS15LFP, STP32N55M5, STP32N65M5, STP34NM60N, STP34NM60ND, IRF4905, STP35NF10, STP36NF06, STP36NF06L, STP3LN62K3, STP3N150, STP3N62K3, STP3NK100Z, STP3NK60Z

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