All MOSFET. STP35N65M5 Datasheet

 

STP35N65M5 Datasheet and Replacement


   Type Designator: STP35N65M5
   Marking Code: 35N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 83 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO220
 

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STP35N65M5 Datasheet (PDF)

 ..1. Size:1202K  st
 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf pdf_icon

STP35N65M5

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

 8.1. Size:421K  st
 stb35nf10 stp35nf10.pdf pdf_icon

STP35N65M5

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

 8.2. Size:466K  st
 stp35nf10.pdf pdf_icon

STP35N65M5

STP35NF10STB35NF10N-CHANNEL 100V - 0.030 - 40ATO-220/ D2PAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP35NF10 100 V

 8.3. Size:134K  samhop
 stp35n10.pdf pdf_icon

STP35N65M5

GreenProductSTP35N10aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.100V 35A 30 @ VGS=10VTO-220 package.DGSTP SERIESTO-220SABSOLUTE MAXIMUM RATINGS (TC=25C unl

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Keywords - STP35N65M5 MOSFET datasheet

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