APT20M45SVFR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M45SVFR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 980
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
D3PAK
APT20M45SVFR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M45SVFR
Datasheet (PDF)
..1. Size:97K apt
apt20m45svfr.pdf 
APT20M45SVFR200V 56A 0.045POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
4.1. Size:95K apt
apt20m45svr.pdf
APT20M45SVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
6.1. Size:92K apt
apt20m45bvr.pdf
APT20M45BVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
6.2. Size:94K apt
apt20m45bvfr.pdf
APT20M45BVFR200V 56A 0.045POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
6.3. Size:375K inchange semiconductor
apt20m45bvr.pdf
isc N-Channel MOSFET Transistor APT20M45BVRFEATURESDrain Current I =56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
6.4. Size:375K inchange semiconductor
apt20m45bvfr.pdf
isc N-Channel MOSFET Transistor APT20M45BVFRFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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