APT20M45SVFR. Аналоги и основные параметры
Наименование производителя: APT20M45SVFR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 980 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT20M45SVFR
- подборⓘ MOSFET транзистора по параметрам
APT20M45SVFR даташит
apt20m45svfr.pdf
APT20M45SVFR 200V 56A 0.045 POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt20m45svr.pdf
APT20M45SVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt20m45bvr.pdf
APT20M45BVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt20m45bvfr.pdf
APT20M45BVFR 200V 56A 0.045 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
Другие IGBT... APT20M26WVR, APT20M38BVFR, APT20M38BVR, APT20M38SVR, APT20M40BVR, APT20M42HVR, APT20M45BVFR, APT20M45BVR, IRF840, APT20M45SVR, APT30M19JVFR, APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR, APT30M70BVFR
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Список транзисторов
Обновления
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