STP60NF10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP60NF10
Marking Code: P60NF10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 104 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
STP60NF10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP60NF10 Datasheet (PDF)
stb60nf10 stb60nf10-1 stp60nf10.pdf
STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V
stp60nf10.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP60NF10FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)
stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
stp60nf06.pdf
STP60NF06N-channel 60V - 0.014 - 60A TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06 60V
stb60nf06l stp60nf06l stp60nf06lfp.pdf
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
stp60nf03l.pdf
STP60NF03LN-channel 30V - 0.008 - 60A TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF03L 30V
stp60nf06fp.pdf
STP60NF06FPN-channel 60V - 0.014 - 30A TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06FP 60V
stp60nf06fp.pdf
STP60NF06FPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Para
stp60nf06l.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06LFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
stp60nf06fp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06FPFEATURESTypical R (on)=0.08DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI3981DV | QS6U22 | SI4288DY | SIA415DJ | SI8417DB | QM6007S
History: SI3981DV | QS6U22 | SI4288DY | SIA415DJ | SI8417DB | QM6007S
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