STP62NS04Z Datasheet and Replacement
Type Designator: STP62NS04Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Id| ⓘ - Maximum Drain Current: 62 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 104 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
STP62NS04Z substitution
STP62NS04Z Datasheet (PDF)
stp62ns04z.pdf
STP62NS04ZN-channel clamped 12.5 m, 62 A, TO-220fully protected MESH OVERLAY Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP62NS04Z Clamped
Datasheet: STP60N3LH5 , STP60N55F3 , STP60NF03L , STP60NF06 , STP60NF06FP , STP60NF06L , STP60NF10 , STP60NS04ZB , MMIS60R580P , STP65NF06 , STP6N120K3 , STP6N52K3 , STP6N62K3 , STP6N95K5 , STP6NK50Z , STP6NK60Z , STP6NK90Z .
History: STB11NM80T4
Keywords - STP62NS04Z MOSFET datasheet
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STP62NS04Z lookup
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History: STB11NM80T4
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