STP62NS04Z Datasheet and Replacement
Type Designator: STP62NS04Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Id|ⓘ - Maximum Drain Current: 62 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 104 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
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STP62NS04Z Datasheet (PDF)
stp62ns04z.pdf
STP62NS04ZN-channel clamped 12.5 m, 62 A, TO-220fully protected MESH OVERLAY Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP62NS04Z Clamped
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - STP62NS04Z MOSFET datasheet
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History: MCH3484 | DMN30H4D0L
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