STP70N10F4 Datasheet and Replacement
Type Designator: STP70N10F4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: TO220
STP70N10F4 substitution
STP70N10F4 Datasheet (PDF)
stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf
STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V
stp70ns04zc.pdf
STP70NS04ZCN-channel clamped 8m - 80A TO-220Fully protected SAFeFET Power MOSFETFeaturesType VDSS RDS(on) IDSTP70NS04ZC Clamped
stb70nf03l stp70nf03l stb70nf03l-1.pdf
STB70NF03LSTP70NF03L - STB70NF03L-1N-channel 30V - 0.0075 - 70A - D2PAK - I2PAK - TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB70NF03L 30V
stb70l60 stp70l60.pdf
GrerrPPrPrProSTB/P70L60aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) TypVDSS IDHigh power and current handling capability.60V 80A 10 @ VGS=10VTO-220 & TO-263 package.DGSTB SERIESSTP SERIESTO-263(DD-PAK)
Datasheet: STP65NF06 , STP6N120K3 , STP6N52K3 , STP6N62K3 , STP6N95K5 , STP6NK50Z , STP6NK60Z , STP6NK90Z , EMB04N03H , STP70NF03L , STP70NS04ZC , STP75N3LLH6 , STP75NF20 , STP75NF68 , STP75NF75 , STP75NS04Z , STP76NF75 .
Keywords - STP70N10F4 MOSFET datasheet
STP70N10F4 cross reference
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STP70N10F4 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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