STP70NS04ZC Specs and Replacement
Type Designator: STP70NS04ZC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220
STP70NS04ZC substitution
- MOSFET ⓘ Cross-Reference Search
STP70NS04ZC datasheet
stp70ns04zc.pdf
STP70NS04ZC N-channel clamped 8m - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type VDSS RDS(on) ID STP70NS04ZC Clamped ... See More ⇒
stb70nf03l stp70nf03l stb70nf03l-1.pdf
STB70NF03L STP70NF03L - STB70NF03L-1 N-channel 30V - 0.0075 - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB70NF03L 30V ... See More ⇒
stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 , 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D2PAK Features Type VDSS RDS(on) max ID STB70N10F4 100 V ... See More ⇒
stb70l60 stp70l60.pdf
Gre r r P Pr Pr Pro STB/P70L60 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Typ VDSS ID High power and current handling capability. 60V 80A 10 @ VGS=10V TO-220 & TO-263 package. D G STB SERIES STP SERIES TO-263(DD-PAK) ... See More ⇒
Detailed specifications: STP6N52K3, STP6N62K3, STP6N95K5, STP6NK50Z, STP6NK60Z, STP6NK90Z, STP70N10F4, STP70NF03L, MMIS60R580P, STP75N3LLH6, STP75NF20, STP75NF68, STP75NF75, STP75NS04Z, STP76NF75, STP78N75F4, STP7N52DK3
Keywords - STP70NS04ZC MOSFET specs
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