All MOSFET. STP8NK80Z Datasheet

 

STP8NK80Z Datasheet and Replacement


   Type Designator: STP8NK80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220
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STP8NK80Z Datasheet (PDF)

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STP8NK80Z

STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3 - 6.2A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP8NK80Z 800 V

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 stp8nk80z stp8nk80zfp stw8nk80z.pdf pdf_icon

STP8NK80Z

STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-channel 800V - 1.3 - 6.2A - TO-220 /TO-220FP/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP8NK80Z 800 V

 0.1. Size:201K  inchange semiconductor
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STP8NK80Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP8NK80ZFPDESCRIPTIONDrain Current I =6.2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSS100% avalanche testedFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETE

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 stf8nk85z stp8nk85z stp8nk85z stf8nk85z.pdf pdf_icon

STP8NK80Z

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

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History: ALD1103DB | CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | ZXM66P03N8 | TK7P65W

Keywords - STP8NK80Z MOSFET datasheet

 STP8NK80Z cross reference
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