STP8NM60ND Specs and Replacement

Type Designator: STP8NM60ND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220

STP8NM60ND substitution

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STP8NM60ND datasheet

 ..1. Size:726K  st
 std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf pdf_icon

STP8NM60ND

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V ... See More ⇒

 5.1. Size:698K  st
 stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

 5.2. Size:698K  st
 stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

 5.3. Size:700K  st
 stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

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Detailed specifications: STP85NF55L, STP8N65M5, STP8NK100Z, STP8NK80Z, STP8NK80ZFP, STP8NM50, STP8NM50N, STP8NM60, 2N7002, STP8NS25, STP90N15F4, STP90N4F3, STP90N55F4, STP90NF03L, STP90NS04ZC, STP95N2LH5, STP95N3LLH6

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