All MOSFET. STP8NM60ND Datasheet

 

STP8NM60ND Datasheet and Replacement


   Type Designator: STP8NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220
 

 STP8NM60ND substitution

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STP8NM60ND Datasheet (PDF)

 ..1. Size:726K  st
 std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf pdf_icon

STP8NM60ND

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

 5.1. Size:698K  st
 stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 5.2. Size:698K  st
 stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 5.3. Size:700K  st
 stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf pdf_icon

STP8NM60ND

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

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Datasheet: STP85NF55L , STP8N65M5 , STP8NK100Z , STP8NK80Z , STP8NK80ZFP , STP8NM50 , STP8NM50N , STP8NM60 , 2N7002 , STP8NS25 , STP90N15F4 , STP90N4F3 , STP90N55F4 , STP90NF03L , STP90NS04ZC , STP95N2LH5 , STP95N3LLH6 .

History: HM5N60

Keywords - STP8NM60ND MOSFET datasheet

 STP8NM60ND cross reference
 STP8NM60ND equivalent finder
 STP8NM60ND lookup
 STP8NM60ND substitution
 STP8NM60ND replacement

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