STP90N55F4 Datasheet. Specs and Replacement

Type Designator: STP90N55F4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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STP90N55F4 substitution

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STP90N55F4 datasheet

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STP90N55F4

STH90N55F4-2 STP90N55F4 N-channel 55 V, 0.0064 , 90 A TO-220, H2PAK STripFET DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V ... See More ⇒

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STP90N55F4

STP90N55F4 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit ... See More ⇒

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STP90N55F4

STH90N15F4-2 STP90N15F4 N-channel 150 V, 12.5 m , 95 A TO-220, H2PAK STripFET DeepGATE Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STH90N15F4-2 150 V ... See More ⇒

Detailed specifications: STP8NK80ZFP, STP8NM50, STP8NM50N, STP8NM60, STP8NM60ND, STP8NS25, STP90N15F4, STP90N4F3, AO3401, STP90NF03L, STP90NS04ZC, STP95N2LH5, STP95N3LLH6, STP95N4F3, STP9NK50Z, STP9NK60Z, STP9NK65Z

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