STP90N55F4 Datasheet and Replacement

STH90N55F4-2STP90N55F4N-channel 55 V, 0.0064 , 90 A TO-220, H2PAKSTripFET DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTH90N55F4-2 55 V

STP90N55F4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

STH90N15F4-2STP90N15F4N-channel 150 V, 12.5 m, 95 A TO-220, H2PAKSTripFET DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max IDSTH90N15F4-2 150 V

STD90N4F3, STI90N4F3STP90N4F3, STU90N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220, IPAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pw3max 121STD90N4F3 40 V

STP90NS04ZCN-channel clamped 5m - 80A TO-220Fully protected SAFeFET Power MOSFETFeaturesType VDSS RDS(on) IDSTP90NS04ZC Clamped

STP90N6F6 N-channel 60 V, 0.0057 typ., 90 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Order code V R max. I P DS DS(on) D TOTSTP90N6F6 60 V 0.0063 90 A 136 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure

STP90NF03LSTB90NF03L-1N-CHANNEL 30V - 0.0056 - 90A TO-220/I2PAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP90NF03L 30 V

STP90NF03LSTB90NF03L-1N-channel 30V - 0.0056 -90A TO-220/I2PAKLow gate charge STripFET Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP90NF03L 30V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP90NF03LFEATURESTypical R (on)=0.0056DSConduction losses reducedSwitching losses reduced100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai