STP90NS04ZC Specs and Replacement

Type Designator: STP90NS04ZC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO220

STP90NS04ZC substitution

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STP90NS04ZC datasheet

 ..1. Size:325K  st
stp90ns04zc.pdf pdf_icon

STP90NS04ZC

STP90NS04ZC N-channel clamped 5m - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type VDSS RDS(on) ID STP90NS04ZC Clamped ... See More ⇒

 8.1. Size:466K  st
sth90n15f4-2 stp90n15f4.pdf pdf_icon

STP90NS04ZC

STH90N15F4-2 STP90N15F4 N-channel 150 V, 12.5 m , 95 A TO-220, H2PAK STripFET DeepGATE Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STH90N15F4-2 150 V ... See More ⇒

 8.3. Size:367K  st
stp90n6f6.pdf pdf_icon

STP90NS04ZC

STP90N6F6 N-channel 60 V, 0.0057 typ., 90 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Order code V R max. I P DS DS(on) D TOT STP90N6F6 60 V 0.0063 90 A 136 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure ... See More ⇒

Detailed specifications: STP8NM50N, STP8NM60, STP8NM60ND, STP8NS25, STP90N15F4, STP90N4F3, STP90N55F4, STP90NF03L, IRFP260, STP95N2LH5, STP95N3LLH6, STP95N4F3, STP9NK50Z, STP9NK60Z, STP9NK65Z, STP9NK65ZFP, STP9NK70Z

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