APT30M90AVR MOSFET. Datasheet pdf. Equivalent

   Type Designator: APT30M90AVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO3

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APT30M90AVR Datasheet (PDF)

..1. Size:64K apt
apt30m90avr.pdf pdf_icon

APT30M90AVR300V 33A 0.090POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

8.1. Size:116K apt
apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

8.2. Size:69K apt
apt30m85.pdf pdf_icon

APT30M85BVFR300V 40A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

8.3. Size:69K apt
apt30m75bll.pdf pdf_icon

APT30M75BLLAPT30M75SLL300V 44A 0.075WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

8.4. Size:170K apt
apt30m36b2fll apt30m36lfll.pdf pdf_icon

APT30M36B2FLLAPT30M36LFLL300V 84A 0.036RFREDFET POWER MOS 7 FREDFETB2FLLPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switchin

8.5. Size:69K apt
apt30m17jll.pdf pdf_icon

APT30M17JLL300V 135A 0.017WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

8.6. Size:67K apt
apt30m75bfllg apt30m75sfllg.pdf pdf_icon

APT30M75BFLLAPT30M75SFLL300V 44A 0.075BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

8.7. Size:23K apt
apt30m85svrg.pdf pdf_icon

APT30M85SVR300V 40A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Lea

8.8. Size:76K apt
apt30m19jvfr.pdf pdf_icon

APT30M19JVFR300V 130A 0.019POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

8.9. Size:168K apt
apt30m36jfll.pdf pdf_icon

APT30M36JFLL300V 76A 0.036R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)"UL Recognized"and Qg. Power MOS 7 combines lower conduction and switching lossesISOTOPalong with e

8.10. Size:116K apt
apt30m40b2vr.pdf pdf_icon

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

8.11. Size:63K apt
apt30m70bvr.pdf pdf_icon

APT30M70BVR300V 48A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

8.12. Size:90K apt
apt30m75bllg apt30m75sllg.pdf pdf_icon

APT30M75BLLAPT30M75SLL300V 44A 0.075RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalo

8.13. Size:154K apt
apt30m30b2llg apt30m30lllg.pdf pdf_icon

APT30M30B2LLAPT30M30LLL300V 100A 0.030RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

8.14. Size:69K apt
apt30m36jll.pdf pdf_icon

APT30M36JLL300V 76A 0.036WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"

8.15. Size:69K apt
apt30m61bll.pdf pdf_icon

APT30M61BLLAPT30M61SLL300V 54A 0.061WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

8.16. Size:69K apt
apt30m85bvfr.pdf pdf_icon

8.17. Size:64K apt
apt30m85bvr.pdf pdf_icon

APT30M85BVR300V 40A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

8.18. Size:72K apt
apt30m36lll apt30m36b2ll.pdf pdf_icon

APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

8.19. Size:70K apt
apt30m40jvr.pdf pdf_icon

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

8.20. Size:69K apt
apt30m30jll.pdf pdf_icon

APT30M30JLL300V 88A 0.030WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"

8.21. Size:69K apt
apt30m36b2ll.pdf pdf_icon

8.22. Size:66K apt
apt30m70bvfr.pdf pdf_icon

APT30M70BVFR300V 48A 0.070POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

8.23. Size:70K apt
apt30m30b2ll.pdf pdf_icon

APT30M30B2LLAPT30M30LLL300V 100A 0.030WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

8.24. Size:148K apt
apt30m30jfll.pdf pdf_icon

APT30M30JFLL300V 88A 0.030R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switching

8.25. Size:88K apt
apt30m40b2vrg.pdf pdf_icon

8.26. Size:73K apt
apt30m40jvfr.pdf pdf_icon

APT30M40JVFR300V 70A 0.040POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

8.27. Size:66K apt
apt30m40lvfr.pdf pdf_icon

APT30M40LVFR300V 76A 0.040POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

8.28. Size:160K apt
apt30m30b2fllg apt30m30lfll.pdf pdf_icon

APT30M30B2FLLAPT30M30LFLL300V 100A 0.030R B2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

8.29. Size:102K apt
apt30m61bfllg apt30m61sfllg.pdf pdf_icon

APT30M61BFLLAPT30M61SFLL300V 54A 0.061R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

8.30. Size:74K apt
apt30m19jvr.pdf pdf_icon

APT30M19JVR300V 130A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

8.31. Size:167K apt
apt30m17jfll.pdf pdf_icon

APT30M17JFLL300V 135A 0.017R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptiona

8.32. Size:214K microsemi
apt30m60j.pdf pdf_icon

APT30M60J 600V, 31A, 0.15 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

8.33. Size:376K inchange semiconductor
apt30m36b2fll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M36B2FLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

8.34. Size:376K inchange semiconductor
apt30m75bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M75BLLFEATURESDrain Current I =44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

8.35. Size:255K inchange semiconductor
apt30m36lll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M36LLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

8.36. Size:376K inchange semiconductor
apt30m75bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M75BFLLFEATURESDrain Current I = 44A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.37. Size:376K inchange semiconductor
apt30m70bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M70BVRFEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

8.38. Size:376K inchange semiconductor
apt30m30b2fll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M30B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

8.39. Size:256K inchange semiconductor
apt30m36lfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M36LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.40. Size:255K inchange semiconductor
apt30m30lfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M30LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.41. Size:375K inchange semiconductor
apt30m61bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M61BLLFEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

8.42. Size:375K inchange semiconductor
apt30m61bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M61BFLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.43. Size:376K inchange semiconductor
apt30m85bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M85BVRFEATURESDrain Current I =40A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

8.44. Size:376K inchange semiconductor
apt30m36b2ll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M36B2LLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.45. Size:376K inchange semiconductor
apt30m70bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M70BVFRFEATURESDrain Current I = 48A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

8.46. Size:376K inchange semiconductor
apt30m30b2ll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT30M30B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: APT30M40JVFR , APT30M40JVR , APT30M40LVFR , APT30M40LVR , APT30M70BVFR , APT30M70BVR , APT30M85BVFR , APT30M85BVR , IRF3710 , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , APT4016BN , APT4016BVR , APT4018HVR , APT4020BN .

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All MOSFET. APT30M90AVR Datasheet

APT30M90AVR MOSFET. Datasheet pdf. Equivalent

APT30M90AVR Datasheet (PDF)

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