STQ1HNK60R MOSFET. Datasheet pdf. Equivalent

   Type Designator: STQ1HNK60R
   Marking Code: 1HNK60R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 23.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO92

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