All MOSFET. STQ1HNK60R Datasheet

 

STQ1HNK60R Datasheet and Replacement


   Type Designator: STQ1HNK60R
   Marking Code: 1HNK60R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 23.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO92
 

 STQ1HNK60R substitution

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STQ1HNK60R Datasheet (PDF)

 ..1. Size:424K  st
 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STQ1HNK60R

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 ..2. Size:427K  st
 std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STQ1HNK60R

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 0.1. Size:466K  st
 stn1hnk60 stq1hnk60r-ap.pdf pdf_icon

STQ1HNK60R

STN1HNK60, STQ1HNK60R-APDatasheetN-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages4 Features231VDS RDS(on) max. IDOrder code PackageSOT-223STN1HNK60 SOT-223600 V 8.5 0.4 ASTQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested32 Gate charge minimized1TO-92 (Ammopack)D(2, 4)Appli

 8.1. Size:1181K  st
 stq1hn60k3-ap.pdf pdf_icon

STQ1HNK60R

STQ1HN60K3-APN-channel 600 V, 6.7 typ., 0.4 A SuperMESH3 Power MOSFET in a TO-92 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTQ1HN60K3-AP 600 V 8 0.4 A 3 W 100% avalanche tested32 Extremely high dv/dt capability1 Gate charge minimizedTO-92 Very low intrinsic capacitance Improved diode reverse recovery cha

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Keywords - STQ1HNK60R MOSFET datasheet

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