STQ2HNK60ZR-AP Specs and Replacement

Type Designator: STQ2HNK60ZR-AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO92

STQ2HNK60ZR-AP substitution

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STQ2HNK60ZR-AP datasheet

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 std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60zr-ap.pdf pdf_icon

STQ2HNK60ZR-AP

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STQ2HNK60ZR-AP Datasheet N-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK, IPAK, TO-220FP and TO-92 packages Features VDS RDS(on)max. ID Order code Package STD2HNK60Z DPAK STD2HNK60Z-1 2 A IPAK 600 V 4.8 STF2HNK60Z TO-220FP STQ2HNK60ZR-AP 0.5 A TO-92 Extremely high dv/dt capability 100% avalanche tested D(2, TA... See More ⇒

 ..2. Size:501K  st
 std2hnk60z stf2hnk60z stq2hnk60zr-ap.pdf pdf_icon

STQ2HNK60ZR-AP

STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID PTOT 3 3 2 1 STD2HNK60Z 600V ... See More ⇒

 4.1. Size:884K  st
 std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60z-ap.pdf pdf_icon

STQ2HNK60ZR-AP

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-AP N-channel 600 V, 4.4 , 2 A Zener-protected SuperMESH Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packages Datasheet production data Features TAB RDS(on) 3 Order codes VDSS max. ID PTOT 3 1 2 1 DPAK STD2HNK60Z 600 V ... See More ⇒

Detailed specifications: STP9NK65Z, STP9NK65ZFP, STP9NK70Z, STP9NK70ZFP, STP9NK90Z, STP9NM60N, STQ1HNK60R, STQ1NK60ZR, NCEP15T14, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, STS12N3LLH5, STS12NF30L

Keywords - STQ2HNK60ZR-AP MOSFET specs

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