STS12N3LLH5 Specs and Replacement
Type Designator: STS12N3LLH5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.2 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
Package: SO8
STS12N3LLH5 substitution
- MOSFET ⓘ Cross-Reference Search
STS12N3LLH5 datasheet
sts12nh3ll.pdf
STS12NH3LL N-channel 30 V - 0.008 - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID STS12NH3LL 30 V ... See More ⇒
sts12nf30l.pdf
STS12NF30L N-channel 30V - 0.008 - 12A SO-8 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STS12NF30L 30V ... See More ⇒
sts126.pdf
Gre r r P Pr Pr Pro STS126 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. Surface Mount Package. 100V 1.4A 312 @ VGS=10V D SOT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sym... See More ⇒
Detailed specifications: STQ1NK60ZR, STQ2HNK60ZR-AP, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, 4N60, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z, STS20N3LLH6
Keywords - STS12N3LLH5 MOSFET specs
STS12N3LLH5 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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