All MOSFET. STS12N3LLH5 Datasheet

 

STS12N3LLH5 Datasheet and Replacement


   Type Designator: STS12N3LLH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: SO8
 

 STS12N3LLH5 substitution

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STS12N3LLH5 Datasheet (PDF)

 ..1. Size:526K  st
 sts12n3llh5.pdf pdf_icon

STS12N3LLH5

STS12N3LLH5N-channel 30 V, 0.0068 , 12 A, SO-8 STripFET V Power MOSFETDatasheet production dataFeaturesRDS(on) Type VDSS IDmax5STS12N3LLH5 30 V

 8.1. Size:335K  st
 sts12nh3ll.pdf pdf_icon

STS12N3LLH5

STS12NH3LLN-channel 30 V - 0.008 - 12 A - SO-8ultra low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTS12NH3LL 30 V

 8.2. Size:324K  st
 sts12nf30l.pdf pdf_icon

STS12N3LLH5

STS12NF30LN-channel 30V - 0.008 - 12A SO-8STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTS12NF30L 30V

 9.1. Size:94K  samhop
 sts126.pdf pdf_icon

STS12N3LLH5

GrerrPPrPrProSTS126aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.Surface Mount Package.100V 1.4A 312 @ VGS=10VDSOT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym

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Datasheet: STQ1NK60ZR , STQ2HNK60ZR-AP , STQ2NK60ZR-AP , STQ3N45K3-AP , STS10DN3LH5 , STS10N3LH5 , STS11N3LLH5 , STS11NF30L , 10N65 , STS12NF30L , STS13N3LLH5 , STS14N3LLH5 , STS19N3LLH6 , STS1DN45K3 , STS1DNC45 , STS1NK60Z , STS20N3LLH6 .

History: SWK15P03

Keywords - STS12N3LLH5 MOSFET datasheet

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