STS12NF30L Specs and Replacement

Type Designator: STS12NF30L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SO8

STS12NF30L substitution

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STS12NF30L datasheet

 ..1. Size:324K  st
 sts12nf30l.pdf pdf_icon

STS12NF30L

STS12NF30L N-channel 30V - 0.008 - 12A SO-8 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STS12NF30L 30V ... See More ⇒

 8.1. Size:335K  st
 sts12nh3ll.pdf pdf_icon

STS12NF30L

STS12NH3LL N-channel 30 V - 0.008 - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID STS12NH3LL 30 V ... See More ⇒

 8.2. Size:526K  st
 sts12n3llh5.pdf pdf_icon

STS12NF30L

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 9.1. Size:94K  samhop
 sts126.pdf pdf_icon

STS12NF30L

Gre r r P Pr Pr Pro STS126 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. Surface Mount Package. 100V 1.4A 312 @ VGS=10V D SOT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sym... See More ⇒

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Detailed specifications: STQ2HNK60ZR-AP, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, STS12N3LLH5, IRFP250, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z, STS20N3LLH6, STS26N3LLH6

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.