STS20N3LLH6 Specs and Replacement

Type Designator: STS20N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SO8

STS20N3LLH6 substitution

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STS20N3LLH6 datasheet

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STS20N3LLH6

STS20N3LLH6 N-channel 30 V, 0.004 , 20 A, SO-8 STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STS20N3LLH6 30 V 0.0047 20 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Application Switching applications Figur... See More ⇒

Detailed specifications: STS12N3LLH5, STS12NF30L, STS13N3LLH5, STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z, AO3407, STS26N3LLH6, STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L, STS4DPF20L, STS4DPF30L

Keywords - STS20N3LLH6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.