STS26N3LLH6 PDF and Equivalents Search

 ..1. Size:724K  st
 sts26n3llh6.pdf

STS26N3LLH6 N-channel 30 V, 0.0038 , 26 A, SO-8 STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max 5 6 7 8 STS26N3LLH6 30 V 0.0044 26 A RDS(on) * Qg industry benchmark 4 3 2 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Applications Swi... See More ⇒

 9.1. Size:119K  samhop
 sts2620a.pdf

STS2620A a S mHop Microelectronics C orp. Ver1.2 Dual Enhancement Mode Field Effect Transistor (N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID 50 @ VGS=4.5V 106 @ VGS=-4.5V 20V 2.5A -20V -2A 76 @ VGS=2.5V 198 @ VGS=-2.5V D1 D2 SOT 26 Top View G1 D1 6 1 G 1 G 2 S2 S1 2 5 3 4 G2 D2 S 1 S 2 ... See More ⇒

 9.2. Size:159K  samhop
 sts2601.pdf

STS2601 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 80 @ VGS=-4.5V SOT-26 package. -20V -4.0A 110 @ VGS=-2.5V SOT 26 D Top View D D 1 6 G D 2 5 D 3 4 G S S (TA=25 C unless otherwise noted) ABSOLUTE MAXIM... See More ⇒

 9.3. Size:121K  samhop
 sts2621.pdf

S TS 2621 S amHop Microelectronics C orp. J un.6 2005 Dual P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) MAX R ugged and reliable. 130 @ VG S = -4.5V -20V -2A S OT-26 Package. 190 @ VG S = -2.5V D1 D2 TS OP6 Top View G1 D1 6 1 S 1 2 5 S 2 G1 G2 3 4 G2 D2 ... See More ⇒

 9.4. Size:114K  samhop
 sts2620.pdf

G P P STS2620 a S mHop Microelectronics C orp. Ver1.2 Dual Enhancement Mode Field Effect Transistor (N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID 53 @ VGS=4.5V 103 @ VGS=-4.5V 20V 2.5A -20V -2A 78 @ VGS=2.5V 190 @ VGS=-2.5V D1 D2 SOT 26 Top View G1 D1 6 1 G 1 G 2 S1 S2 2 5 3 4 G2 D2 S ... See More ⇒

 9.5. Size:166K  samhop
 sts2622a.pdf

Green Product STS2622A a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 60 @ VGS=4.5V Suface Mount Package. 20V 3.4A 90 @ VGS=2.5V D1 D2 SOT 26 Top View G1 D1 6 1 G 1 G 2 S2 2 5 S1 3 4 G2 D2 S 1 S 2... See More ⇒