All MOSFET. STS26N3LLH6 Datasheet

 

STS26N3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS26N3LLH6
   Marking Code: 26G3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: SO8

 STS26N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS26N3LLH6 Datasheet (PDF)

 ..1. Size:724K  st
 sts26n3llh6.pdf

STS26N3LLH6 STS26N3LLH6

STS26N3LLH6N-channel 30 V, 0.0038 , 26 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS26N3LLH6 30 V 0.0044 26 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Swi

 9.1. Size:119K  samhop
 sts2620a.pdf

STS26N3LLH6 STS26N3LLH6

STS2620AaS mHop Microelectronics C orp.Ver1.2Dual Enhancement Mode Field Effect Transistor (N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID50 @ VGS=4.5V 106 @ VGS=-4.5V20V 2.5A -20V -2A76 @ VGS=2.5V 198 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S2S12 534G2D2S 1S 2

 9.2. Size:159K  samhop
 sts2601.pdf

STS26N3LLH6 STS26N3LLH6

STS2601aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.80 @ VGS=-4.5VSOT-26 package.-20V -4.0A110 @ VGS=-2.5VSOT 26DTop ViewD D1 6GD 2 5 D34G SS(TA=25C unless otherwise noted)ABSOLUTE MAXIM

 9.3. Size:121K  samhop
 sts2621.pdf

STS26N3LLH6 STS26N3LLH6

S TS 2621S amHop Microelectronics C orp.J un.6 2005Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MAXR ugged and reliable.130 @ VG S = -4.5V-20V -2AS OT-26 Package.190 @ VG S = -2.5VD1 D2TS OP6Top ViewG1D161S 1 2 5 S 2G1 G234G2D2

 9.4. Size:114K  samhop
 sts2620.pdf

STS26N3LLH6 STS26N3LLH6

GPPSTS2620aS mHop Microelectronics C orp.Ver1.2Dual Enhancement Mode Field Effect Transistor (N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID53 @ VGS=4.5V 103 @ VGS=-4.5V20V 2.5A -20V -2A78 @ VGS=2.5V 190 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S1S22 534G2D2S

 9.5. Size:166K  samhop
 sts2622a.pdf

STS26N3LLH6 STS26N3LLH6

GreenProductSTS2622AaS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.60 @ VGS=4.5VSuface Mount Package.20V 3.4A90 @ VGS=2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S22 5 S134G2D2S 1S 2

Datasheet: STS12NF30L , STS13N3LLH5 , STS14N3LLH5 , STS19N3LLH6 , STS1DN45K3 , STS1DNC45 , STS1NK60Z , STS20N3LLH6 , IRFB31N20D , STS2DNF30L , STS3N95K3 , STS4DNF30L , STS4DNF60L , STS4DNFS30L , STS4DPF20L , STS4DPF30L , STS4NF100 .

History: STV7NA40 | 2N7002BKV

 

 
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