STS26N3LLH6N-channel 30 V, 0.0038 , 26 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS26N3LLH6 30 V 0.0044 26 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on)1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Swi

STS2620AaS mHop Microelectronics C orp.Ver1.2Dual Enhancement Mode Field Effect Transistor (N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID50 @ VGS=4.5V 106 @ VGS=-4.5V20V 2.5A -20V -2A76 @ VGS=2.5V 198 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S2S12 534G2D2S 1S 2

STS2601aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.80 @ VGS=-4.5VSOT-26 package.-20V -4.0A110 @ VGS=-2.5VSOT 26DTop ViewD D1 6GD 2 5 D34G SS(TA=25C unless otherwise noted)ABSOLUTE MAXIM

S TS 2621S amHop Microelectronics C orp.J un.6 2005Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MAXR ugged and reliable.130 @ VG S = -4.5V-20V -2AS OT-26 Package.190 @ VG S = -2.5VD1 D2TS OP6Top ViewG1D161S 1 2 5 S 2G1 G234G2D2

GPPSTS2620aS mHop Microelectronics C orp.Ver1.2Dual Enhancement Mode Field Effect Transistor (N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID53 @ VGS=4.5V 103 @ VGS=-4.5V20V 2.5A -20V -2A78 @ VGS=2.5V 190 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S1S22 534G2D2S

GreenProductSTS2622AaS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.60 @ VGS=4.5VSuface Mount Package.20V 3.4A90 @ VGS=2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S22 5 S134G2D2S 1S 2