APT4014BVR Specs and Replacement

Type Designator: APT4014BVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO247

APT4014BVR substitution

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APT4014BVR datasheet

 ..1. Size:64K  apt
 apt4014bvr.pdf pdf_icon

APT4014BVR

APT4014BVR 400V 28A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 5.1. Size:72K  apt
 apt4014bvfrg apt4014svfrg.pdf pdf_icon

APT4014BVR

APT4014BVFR APT4014SVFR 400V 28A 0.140 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.... See More ⇒

 5.2. Size:375K  inchange semiconductor
 apt4014bvfr.pdf pdf_icon

APT4014BVR

isc N-Channel MOSFET Transistor APT4014BVFR FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 7.1. Size:64K  apt
 apt4014hvr.pdf pdf_icon

APT4014BVR

APT4014HVR 400V 28A 0.140 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

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Detailed specifications: APT30M40LVFR, APT30M40LVR, APT30M70BVFR, APT30M70BVR, APT30M85BVFR, APT30M85BVR, APT30M90AVR, APT4012BVR, IRFB4227, APT4014HVR, APT4015AVR, APT4016BN, APT4016BVR, APT4018HVR, APT4020BN, APT4020BVR, APT4030CNR

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