All MOSFET. APT4014BVR Datasheet

 

APT4014BVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT4014BVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 560 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO247

APT4014BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT4014BVR Datasheet (PDF)

1.1. apt4014bvr.pdf Size:64K _apt

APT4014BVR
APT4014BVR

APT4014BVR 400V 28A 0.140Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

3.1. apt4014hvr.pdf Size:64K _apt

APT4014BVR
APT4014BVR

APT4014HVR 400V 28A 0.140Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

4.1. apt4015avr.pdf Size:64K _apt

APT4014BVR
APT4014BVR

APT4015AVR 400V 25.5A 0.150Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.2. apt4016bn.pdf Size:52K _apt

APT4014BVR
APT4014BVR

D TO-247 G APT4016BN 400V 31.0A 0.16Ω S APT4018BN 400V 29.0A 0.18Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 4016BN 4018BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25°C 31 29 Amps IDM Pulsed Drain Current 1 124 116

4.3. apt4016bvr.pdf Size:64K _apt

APT4014BVR
APT4014BVR

APT4016BVR 400V 27A 0.160Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.4. apt4018hvr.pdf Size:63K _apt

APT4014BVR
APT4014BVR

APT4018HVR 400V 22A 0.180Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.5. apt4012bvr.pdf Size:65K _apt

APT4014BVR
APT4014BVR

APT4012BVR 400V 37A 0.120Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

Datasheet: APT30M40LVFR , APT30M40LVR , APT30M70BVFR , APT30M70BVR , APT30M85BVFR , APT30M85BVR , APT30M90AVR , APT4012BVR , IRFP250 , APT4014HVR , APT4015AVR , APT4016BN , APT4016BVR , APT4018HVR , APT4020BN , APT4020BVR , APT4030CNR .

 


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