STS3N95K3 Specs and Replacement
Type Designator: STS3N95K3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm
Package: SO8
STS3N95K3 substitution
- MOSFET ⓘ Cross-Reference Search
STS3N95K3 datasheet
sts3n95k3.pdf
STS3N95K3 N-channel 950 V, 5 , 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features RDS(on) Order code VDSS ID Pw max STS3N95K3 950 V ... See More ⇒
Detailed specifications: STS14N3LLH5, STS19N3LLH6, STS1DN45K3, STS1DNC45, STS1NK60Z, STS20N3LLH6, STS26N3LLH6, STS2DNF30L, IRF520, STS4DNF30L, STS4DNF60L, STS4DNFS30L, STS4DPF20L, STS4DPF30L, STS4NF100, STS5DNF20V, STS5DNF60L
Keywords - STS3N95K3 MOSFET specs
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