All MOSFET. STS5DNF20V Datasheet

 

STS5DNF20V Datasheet and Replacement


   Type Designator: STS5DNF20V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO8
 

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STS5DNF20V Datasheet (PDF)

 ..1. Size:437K  st
 sts5dnf20v.pdf pdf_icon

STS5DNF20V

STS5DNF20VN-channel 20 V, 0.030 , 5 A SO-82.7 V, drive STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max. ID

 7.1. Size:513K  st
 sts5dnf60l.pdf pdf_icon

STS5DNF20V

STS5DNF60LAutomotive-grade dual N-channel 60 V, 0.035 typ., 5 ASTripFET II Power MOSFET in an SO-8 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. IDSTS5DNF60L 60 V 0.045 5 A AEC-Q101 qualified Low threshold driveSO-8Applications Switching applicationsDescriptionFigure 1. Internal schematic diagramThis Power MOSFET has been d

 7.2. Size:952K  cn vbsemi
 sts5dnf60l.pdf pdf_icon

STS5DNF20V

STS5DNF60Lwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 8.1. Size:75K  st
 sts5dne30l.pdf pdf_icon

STS5DNF20V

STS5DNE30LN - CHANNEL 30V - 0.039 - 5A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS5DNE30L 30 V

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Datasheet: STS2DNF30L , STS3N95K3 , STS4DNF30L , STS4DNF60L , STS4DNFS30L , STS4DPF20L , STS4DPF30L , STS4NF100 , IRF520 , STS5DNF60L , STS5N15F3 , STS5N15F4 , STS5NF60L , STS5PF30L , STS6NF20V , STS7NF60L , STS7PF30L .

History: 3SK260 | AP9561GM-HF | 4N70G-TF3-T | AONV420A70 | JCS15N70FC

Keywords - STS5DNF20V MOSFET datasheet

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