STS5DNF20V Specs and Replacement

Type Designator: STS5DNF20V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SO8

STS5DNF20V substitution

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STS5DNF20V datasheet

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 sts5dnf20v.pdf pdf_icon

STS5DNF20V

STS5DNF20V N-channel 20 V, 0.030 , 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS(on) max. ID ... See More ⇒

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 sts5dnf60l.pdf pdf_icon

STS5DNF20V

STS5DNF60L Automotive-grade dual N-channel 60 V, 0.035 typ., 5 A STripFET II Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max. ID STS5DNF60L 60 V 0.045 5 A AEC-Q101 qualified Low threshold drive SO-8 Applications Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET has been d... See More ⇒

 7.2. Size:952K  cn vbsemi
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STS5DNF20V

STS5DNF60L www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann... See More ⇒

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 sts5dne30l.pdf pdf_icon

STS5DNF20V

STS5DNE30L N - CHANNEL 30V - 0.039 - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STS5DNE30L 30 V ... See More ⇒

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Detailed specifications: STS2DNF30L, STS3N95K3, STS4DNF30L, STS4DNF60L, STS4DNFS30L, STS4DPF20L, STS4DPF30L, STS4NF100, 75N75, STS5DNF60L, STS5N15F3, STS5N15F4, STS5NF60L, STS5PF30L, STS6NF20V, STS7NF60L, STS7PF30L

Keywords - STS5DNF20V MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs