All MOSFET. STS5NF60L Datasheet

 

STS5NF60L Datasheet and Replacement


   Type Designator: STS5NF60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SO8
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STS5NF60L Datasheet (PDF)

 ..1. Size:309K  st
 sts5nf60l.pdf pdf_icon

STS5NF60L

STS5NF60LN-channel 60V - 0.045 - 5A - SO-8STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS5NF60L 60V

 6.1. Size:68K  st
 sts5nf60.pdf pdf_icon

STS5NF60L

STS5NF60LN - CHANNEL 60V - 0.045 - 5A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS5NF60L 60 V

 9.1. Size:569K  st
 sts5n15f3.pdf pdf_icon

STS5NF60L

STS5N15F3N-channel 150 V, 0.045 , 5 A, SO-8STripFETTM III Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS5N15F3 150 V

 9.2. Size:277K  st
 sts5ns150.pdf pdf_icon

STS5NF60L

STS5NS150N-CHANNEL 150V - 0.075 - 5A SO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS5NS150 150 V

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History: VBNC1303 | IRFS4010PBF

Keywords - STS5NF60L MOSFET datasheet

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