STU27N3LH5 Specs and Replacement

Type Designator: STU27N3LH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO251

STU27N3LH5 substitution

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STU27N3LH5 datasheet

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 std27n3lh5 stp27n3lh5 stu27n3lh5.pdf pdf_icon

STU27N3LH5

STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID 3 3 STD27N3LH5 30 V 0.019 27 A 1 2 1 STP27N3LH5 30 V 0.020 27 A IPAK DPAK STU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge 3 ... See More ⇒

Detailed specifications: STS9NF30L, STS9NF3LL, STT3PF20V, STU10NM60N, STU11NM60ND, STU12N65M5, STU150N3LLH6, STU16N65M5, AO4468, STU2N62K3, STU2NK100Z, STU3LN62K3, STU3N45K3, STU3N62K3, STU4N52K3, STU4N62K3, STU5N52K3

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