APT4016BN MOSFET. Datasheet pdf. Equivalent

   Type Designator: APT4016BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247

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APT4016BN Datasheet (PDF)

..1. Size:52K apt
apt4016bn.pdf pdf_icon

DTO-247GAPT4016BN 400V 31.0A 0.16SAPT4018BN 400V 29.0A 0.18POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4016BN 4018BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C31 29AmpsIDM Pulsed Drain Current 1124 116

6.1. Size:64K apt
apt4016bvr.pdf pdf_icon

APT4016BVR400V 27A 0.160POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

6.2. Size:72K apt
apt4016bvfrg apt4016svfrg.pdf pdf_icon

400V 27A 0.16APT4016BVFR APT4016SVFRAPT4016BVFRG* APT4016SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF

8.1. Size:73K apt
apt4012bvfrg apt4012svfrg.pdf pdf_icon

APT4012BVFRAPT4012SVFR400V 37A 0.120BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

8.2. Size:64K apt
apt4014bvr.pdf pdf_icon

APT4014BVR400V 28A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

8.3. Size:36K apt
apt4018bn.pdf pdf_icon

8.4. Size:63K apt
apt4018hvr.pdf pdf_icon

APT4018HVR400V 22A 0.180POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

8.5. Size:72K apt
apt4014bvfrg apt4014svfrg.pdf pdf_icon

APT4014BVFRAPT4014SVFR400V 28A 0.140BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

8.6. Size:65K apt
apt4012bvr.pdf pdf_icon

APT4012BVR400V 37A 0.120POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

8.7. Size:64K apt
apt4015avr.pdf pdf_icon

APT4015AVR400V 25.5A 0.150POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

8.8. Size:64K apt
apt4014hvr.pdf pdf_icon

APT4014HVR400V 28A 0.140POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

8.9. Size:375K inchange semiconductor
apt4014bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT4014BVFRFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: APT30M70BVR , APT30M85BVFR , APT30M85BVR , APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , IRF630 , APT4016BVR , APT4018HVR , APT4020BN , APT4020BVR , APT4030CNR , APT40M35JVR , APT40M35PVR , APT40M42JN .

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APT4016BN MOSFET. Datasheet pdf. Equivalent

APT4016BN Datasheet (PDF)

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