APT4016BN - описание и поиск аналогов

 ..1. Size:52K  apt
 apt4016bn.pdf 

D TO-247 G APT4016BN 400V 31.0A 0.16 S APT4018BN 400V 29.0A 0.18 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 4016BN 4018BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25 C 31 29 Amps IDM Pulsed Drain Current 1 124 116

 6.1. Size:64K  apt
 apt4016bvr.pdf 

APT4016BVR 400V 27A 0.160 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 6.2. Size:72K  apt
 apt4016bvfrg apt4016svfrg.pdf 

400V 27A 0.16 APT4016BVFR APT4016SVFR APT4016BVFRG* APT4016SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVF

 8.1. Size:73K  apt
 apt4012bvfrg apt4012svfrg.pdf 

APT4012BVFR APT4012SVFR 400V 37A 0.120 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 8.2. Size:64K  apt
 apt4014bvr.pdf 

APT4014BVR 400V 28A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 8.3. Size:36K  apt
 apt4018bn.pdf 

D TO-247 G APT4016BN 400V 31.0A 0.16 S APT4018BN 400V 29.0A 0.18 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 4016BN 4018BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25 C 31 29 Amps IDM Pulsed Drain Current 1 124 116

 8.4. Size:63K  apt
 apt4018hvr.pdf 

APT4018HVR 400V 22A 0.180 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 8.5. Size:72K  apt
 apt4014bvfrg apt4014svfrg.pdf 

APT4014BVFR APT4014SVFR 400V 28A 0.140 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 8.6. Size:65K  apt
 apt4012bvr.pdf 

APT4012BVR 400V 37A 0.120 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 8.7. Size:64K  apt
 apt4015avr.pdf 

APT4015AVR 400V 25.5A 0.150 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 8.8. Size:64K  apt
 apt4014hvr.pdf 

APT4014HVR 400V 28A 0.140 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.9. Size:375K  inchange semiconductor
 apt4014bvfr.pdf 

isc N-Channel MOSFET Transistor APT4014BVFR FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur