STU70N2LH5 Specs and Replacement

Type Designator: STU70N2LH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm

Package: TO251

STU70N2LH5 substitution

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STU70N2LH5 datasheet

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 std70n2lh5 stu70n2lh5.pdf pdf_icon

STU70N2LH5

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 , 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A 3 3 2 RDS(on) * Qg industry benchmark 1 1 Extremely low on-resistance RDS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness L... See More ⇒

Detailed specifications: STU5N52K3, STU5N62K3, STU5N95K3, STU60N3LH5, STU60N55F3, STU65N3LLH5, STU6N62K3, STU6NF10, IRF640N, STU75N3LLH6, STU75N3LLH6-S, STU7NM60N, STU85N3LH5, STU8N65M5, STU8NM50N, STU8NM60ND, STU90N4F3

Keywords - STU70N2LH5 MOSFET specs

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