STU8N65M5 Specs and Replacement

Type Designator: STU8N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

STU8N65M5 substitution

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STU8N65M5 datasheet

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STU8N65M5

STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STU8NA80 800 V ... See More ⇒

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STU8N65M5

STU8NC90Z STU8NC90ZI N-CHANNEL 900V - 1.1 - 7.6A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STU8NC90Z 900 V ... See More ⇒

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Detailed specifications: STU65N3LLH5, STU6N62K3, STU6NF10, STU70N2LH5, STU75N3LLH6, STU75N3LLH6-S, STU7NM60N, STU85N3LH5, 10N60, STU8NM50N, STU8NM60ND, STU90N4F3, STU95N2LH5, STU95N3LLH6, STV240N75F3, STV250N55F3, STV270N4F3

Keywords - STU8N65M5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.