STW20NM60FD MOSFET Datasheet: N-Ch, 600V, 20A. Full specification with pinout and replacement list

STW20NM60FD Specs and Replacement

Type Designator: STW20NM60FD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO247

STW20NM60FD substitution

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STW20NM60FD datasheet

..1. Size:344K st
stf20nm60d stp20nm60fd stw20nm60fd.pdf pdf_icon

STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V ... See More ⇒

..2. Size:212K inchange semiconductor
stw20nm60fd.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM60FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

5.1. Size:444K st
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STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒

5.2. Size:256K st
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