STW20NM60FD Datasheet and Replacement
Type Designator: STW20NM60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO247
STW20NM60FD substitution
STW20NM60FD Datasheet (PDF)
stf20nm60d stp20nm60fd stw20nm60fd.pdf

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V
stw20nm60fd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM60FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stw20nm60.pdf

STW20NM60N-CHANNEL 600V - 0.26 - 20A TO-247MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTW20NM60 600V
Datasheet: STW18NM60N , STW18NM80 , STW19NM50N , STW20N95K5 , STW20NK50Z , STW20NM50 , STW20NM50FD , STW20NM60 , RFP50N06 , STW21N65M5 , STW21N90K5 , STW21NM60ND , STW22NM60N , STW23NM50N , STW23NM60ND , STW24NK55Z , STW24NM60N .
History: ATM2N65TE | AP4820AGYT | 2SK2939 | 2SK3221 | FQD6N40C | ATM3400ANSA | ATM2306NSA
Keywords - STW20NM60FD MOSFET datasheet
STW20NM60FD cross reference
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STW20NM60FD replacement
History: ATM2N65TE | AP4820AGYT | 2SK2939 | 2SK3221 | FQD6N40C | ATM3400ANSA | ATM2306NSA



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