All MOSFET. STW35N65M5 Datasheet

 

STW35N65M5 Datasheet and Replacement


   Type Designator: STW35N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247
 

 STW35N65M5 substitution

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STW35N65M5 Datasheet (PDF)

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 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf pdf_icon

STW35N65M5

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

 6.1. Size:257K  st
 stw35n65dm2.pdf pdf_icon

STW35N65M5

STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB

 7.1. Size:578K  st
 stw35n60dm2.pdf pdf_icon

STW35N65M5

STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely

Datasheet: STW30N65M5 , STW30NF20 , STW30NM50N , STW32N55M5 , STW32N65M5 , STW34NB20 , STW34NM60N , STW34NM60ND , IRF830 , STW36NM60N , STW3N150 , STW40NF20 , STW42N65M5 , STW43NM60N , STW43NM60ND , STW45NM50 , STW45NM50FD .

History: MDP4N60TP

Keywords - STW35N65M5 MOSFET datasheet

 STW35N65M5 cross reference
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 STW35N65M5 replacement

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