STW36NM60N Datasheet and Replacement
Type Designator: STW36NM60N
Marking Code: 36NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 83.6 nC
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 173 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
STW36NM60N substitution
STW36NM60N Datasheet (PDF)
stw36nm60n.pdf

STW36NM60NN-channel 600 V, 0.092 , 29 A, MDmesh II Power MOSFETin TO-247FeaturesRDS(on) VDSS @ Order code ID PWTJmaxmaxSTW36NM60N 650 V
stb36nm60nd stw36nm60nd.pdf

STB36NM60ND, STW36NM60NDAutomotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFETs (with fast diode) in D2PAK and TO-247 packagesDatasheet - production dataFeaturesVDSS @TJ RDS(on) Order codes IDmax. max.TABSTB36NM60ND650 V 0.110 29 ASTW36NM60ND3 Designed for automotive applications and 1 32 AEC-Q101 qualified1 100% avalanche t
stp36n60m6 stw36n60m6.pdf

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested
stp36n55m5 stw36n55m5.pdf

STP36N55M5 STW36N55M5N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxTABSTP36N55M5600 V
Datasheet: STW30NF20 , STW30NM50N , STW32N55M5 , STW32N65M5 , STW34NB20 , STW34NM60N , STW34NM60ND , STW35N65M5 , 60N06 , STW3N150 , STW40NF20 , STW42N65M5 , STW43NM60N , STW43NM60ND , STW45NM50 , STW45NM50FD , STW45NM60 .
Keywords - STW36NM60N MOSFET datasheet
STW36NM60N cross reference
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