STW43NM60ND MOSFET. Datasheet pdf. Equivalent
Type Designator: STW43NM60ND
Marking Code: 43NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 145 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO247
STW43NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW43NM60ND Datasheet (PDF)
stw43nm60nd.pdf
STW43NM60NDN-channel 600 V, 0.075 , 35 A TO-247FDmesh Power MOSFET (with fast diode)FeaturesVDSS @ RDS(on) Type IDTJMAX maxSTW43NM60ND 650 V
stw43nm60n.pdf
STW43NM60NN-channel 600 V, 0.075 , 35 A MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW43NM60N 650 V
stw43nm50n.pdf
STW43NM50NN-channel 500 V, 0.070 , 37 A MDmesh II Power MOSFETTO-247FeaturesVDSS @ RDS(on) Type IDTjmax maxSTW43NM50N 550 V
stw43n60dm2.pdf
STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK1271
History: 2SK1271
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