All MOSFET. STW43NM60ND Datasheet

 

STW43NM60ND Datasheet and Replacement


   Type Designator: STW43NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO247
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STW43NM60ND Datasheet (PDF)

 ..1. Size:621K  st
 stw43nm60nd.pdf pdf_icon

STW43NM60ND

STW43NM60NDN-channel 600 V, 0.075 , 35 A TO-247FDmesh Power MOSFET (with fast diode)FeaturesVDSS @ RDS(on) Type IDTJMAX maxSTW43NM60ND 650 V

 4.1. Size:494K  st
 stw43nm60n.pdf pdf_icon

STW43NM60ND

STW43NM60NN-channel 600 V, 0.075 , 35 A MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW43NM60N 650 V

 7.1. Size:479K  st
 stw43nm50n.pdf pdf_icon

STW43NM60ND

STW43NM50NN-channel 500 V, 0.070 , 37 A MDmesh II Power MOSFETTO-247FeaturesVDSS @ RDS(on) Type IDTjmax maxSTW43NM50N 550 V

 8.1. Size:308K  st
 stw43n60dm2.pdf pdf_icon

STW43NM60ND

STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2

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History: AOTF298L | SUD80460E | 2N4118A

Keywords - STW43NM60ND MOSFET datasheet

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