All MOSFET. STW47NM60ND Datasheet

 

STW47NM60ND Datasheet and Replacement


   Type Designator: STW47NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO247
 

 STW47NM60ND substitution

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STW47NM60ND Datasheet (PDF)

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STW47NM60ND

STW47NM60NDAutomotive-grade N-channel 600 V, 0.075 typ., 35 A FDmesh IIPower MOSFET (with fast diode) in a TO-247 packageDatasheet - production dataFeatures Order code VDS @ TJMAX RDS(on) max IDSTW47NM60ND 650 V 0.088 35 A Designed for automotive applications and AEC-Q101 qualified32 The worldwide best RDS(on)*area amongst the 1fast recovery diode device

 ..2. Size:304K  inchange semiconductor
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STW47NM60ND

isc N-Channel MOSFET Transistor STW47NM60NDFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 88m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

 5.1. Size:117K  st
 stw47nm60.pdf pdf_icon

STW47NM60ND

STW47NM60N-CHANNEL 600V - 0.075 - 47ATO-247MDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTW47NM60 600V

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 stw47nm50.pdf pdf_icon

STW47NM60ND

STW47NM50N-CHANNEL 500V - 0.065 - 45ATO-247MDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTW47NM50 500V

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Datasheet: STW40NF20 , STW42N65M5 , STW43NM60N , STW43NM60ND , STW45NM50 , STW45NM50FD , STW45NM60 , STW45NM60D , AO4468 , STW48NM60N , STW4N150 , STW52NK25Z , STW54NM65ND , STW55NM60ND , STW56NM60N , STW58NM60N , STW5NK100Z .

History: SVF7N65CT

Keywords - STW47NM60ND MOSFET datasheet

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