STW47NM60ND MOSFET Datasheet: N-Ch, 600V, 35A. Full specification with pinout and replacement list

STW47NM60ND Specs and Replacement

Type Designator: STW47NM60ND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 255 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm

Package: TO247

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STW47NM60ND datasheet

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STW47NM60ND Automotive-grade N-channel 600 V, 0.075 typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package Datasheet - production data Features Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 35 A Designed for automotive applications and AEC-Q101 qualified 3 2 The worldwide best RDS(on)*area amongst the 1 fast recovery diode device... See More ⇒

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isc N-Channel MOSFET Transistor STW47NM60ND FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 88m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive... See More ⇒

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