STW47NM60ND MOSFET. Datasheet pdf. Equivalent

   Type Designator: STW47NM60ND
   Marking Code: 47NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO247

STW47NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STW47NM60ND Datasheet (PDF)

..1. Size:673K st
stw47nm60nd.pdf

STW47NM60NDAutomotive-grade N-channel 600 V, 0.075 typ., 35 A FDmesh IIPower MOSFET (with fast diode) in a TO-247 packageDatasheet - production dataFeatures Order code VDS @ TJMAX RDS(on) max IDSTW47NM60ND 650 V 0.088 35 A Designed for automotive applications and AEC-Q101 qualified32 The worldwide best RDS(on)*area amongst the 1fast recovery diode device

..2. Size:304K inchange semiconductor
stw47nm60nd.pdf

isc N-Channel MOSFET Transistor STW47NM60NDFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 88m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

5.1. Size:117K st
stw47nm60.pdf