STW47NM60ND Datasheet and Replacement
Type Designator: STW47NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO247
STW47NM60ND substitution
STW47NM60ND Datasheet (PDF)
stw47nm60nd.pdf
STW47NM60NDAutomotive-grade N-channel 600 V, 0.075 typ., 35 A FDmesh IIPower MOSFET (with fast diode) in a TO-247 packageDatasheet - production dataFeatures Order code VDS @ TJMAX RDS(on) max IDSTW47NM60ND 650 V 0.088 35 A Designed for automotive applications and AEC-Q101 qualified32 The worldwide best RDS(on)*area amongst the 1fast recovery diode device
stw47nm60nd.pdf
isc N-Channel MOSFET Transistor STW47NM60NDFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 88m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive
stw47nm60.pdf
STW47NM60N-CHANNEL 600V - 0.075 - 47ATO-247MDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTW47NM60 600V
stw47nm50.pdf
STW47NM50N-CHANNEL 500V - 0.065 - 45ATO-247MDmeshPower MOSFETADVANCED DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTW47NM50 500V
Datasheet: STW40NF20 , STW42N65M5 , STW43NM60N , STW43NM60ND , STW45NM50 , STW45NM50FD , STW45NM60 , STW45NM60D , IRFB7545 , STW48NM60N , STW4N150 , STW52NK25Z , STW54NM65ND , STW55NM60ND , STW56NM60N , STW58NM60N , STW5NK100Z .
History: ZXM62N03G | WMB060N10HGS | 2SK3116 | 2SK3115 | AP6982GN2-HF | 2SK3134L | AOWF12T60P
Keywords - STW47NM60ND MOSFET datasheet
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History: ZXM62N03G | WMB060N10HGS | 2SK3116 | 2SK3115 | AP6982GN2-HF | 2SK3134L | AOWF12T60P
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