All MOSFET. STW77N65M5 Datasheet

 

STW77N65M5 Datasheet and Replacement


   Type Designator: STW77N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO247
 

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STW77N65M5 Datasheet (PDF)

 ..1. Size:754K  st
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STW77N65M5

STW77N65M5N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFETTO-247FeaturesVDSS Type RDS(on) max ID@TjMAXSTW77N65M5 710 V

 ..2. Size:212K  inchange semiconductor
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STW77N65M5

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW77N65M5FEATURESWith TO-247 packageLow input capacitance and gate chargeLow gate input resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Datasheet: STW5NK100Z , STW60N65M5 , STW62NM60N , STW6N120K3 , STW6N95K5 , STW70N10F4 , STW75NF20 , STW75NF30 , IRFP260N , STW7N95K3 , STW7NK90Z , STW8NK80Z , STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , STY112N65M5 .

History: PHM18NQ15T | IPP60R600E6

Keywords - STW77N65M5 MOSFET datasheet

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