STW9NK90Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: STW9NK90Z
Marking Code: W9NK90Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 160
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO247
STW9NK90Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW9NK90Z
Datasheet (PDF)
..1. Size:991K st
stb9nk90z stf9nk90z stp9nk90z stw9nk90z.pdf 
STB9NK90Z, STF9NK90ZSTP9NK90Z, STW9NK90ZN-channel 900 V, 1.1 , 8 A, TO-220, TO-220FP, D2PAK, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax.331STB9NK90Z 160 W 21DPAKTO-220STW9NK90Z 160 W900V
..2. Size:305K inchange semiconductor
stw9nk90z.pdf
iscN-Channel MOSFET Transistor STW9NK90ZFEATURESDrain Current : I =8A@ T =25D CDrain Source Voltage: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL
7.1. Size:307K st
stw9nk95z.pdf
STW9NK95ZN-channel 950 V - 1.15 - 7 A - TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwMaxSTW9NK95Z 950 V
9.1. Size:132K st
2sk2078 stw9na80.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
9.2. Size:125K st
stw9na60.pdf
STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V
9.3. Size:279K st
stw9nb80.pdf
STW9NB80N-CHANNEL 800V - 0.85 - 9.3A TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB80 800V
9.4. Size:248K st
stw9nc70z.pdf
STW9NC70ZN-CHANNEL 700V - 0.90 - 7.5A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC70Z 700 V
9.5. Size:270K st
stw9nb90.pdf
STW9NB90N-CHANNEL 900V - 0.85 - 9.7A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB90 900 V
9.6. Size:260K st
stw9n150.pdf
STW9N150N-channel 1500 V - 1.8 - 8 A - TO-247very high voltage PowerMESH Power MOSFETFeaturesType VDSS RDS(on) ID PwSTW9N150 1500 V
9.7. Size:791K st
stp9n80k5 stw9n80k5.pdf
STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP9N80K5 800 V 0.90 7 A STW9N80K5 33 Industrys lowest R x area DS(on)221 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avala
9.8. Size:132K st
stw9na80.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
9.9. Size:248K st
stw9nc80z.pdf
STW9NC80ZN-CHANNEL 800V - 0.82 - 9.4A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC80Z 800 V
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