STY112N65M5 Specs and Replacement
Type Designator: STY112N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 365 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: MAX247
STY112N65M5 substitution
- MOSFET ⓘ Cross-Reference Search
STY112N65M5 datasheet
sty112n65m5.pdf
STY112N65M5 N-channel 650 V, 0.019 , 96 A, MDmesh V Power MOSFET Max247 Features VDSS Order code RDS(on) max ID @TjMAX STY112N65M5 710 V ... See More ⇒
Detailed specifications: STW77N65M5, STW7N95K3, STW7NK90Z, STW8NK80Z, STW90NF20, STW9N150, STW9NK70Z, STW9NK90Z, AON6414A, STY130NF20D, STY140NS10, STY30NK90Z, STY60NK30Z, STY60NM50, STY60NM60, STY80NM60N, STZ150NF55T
Keywords - STY112N65M5 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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