STY112N65M5 Datasheet and Replacement
Type Designator: STY112N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 365 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: MAX247
STY112N65M5 substitution
STY112N65M5 Datasheet (PDF)
sty112n65m5.pdf
STY112N65M5N-channel 650 V, 0.019 , 96 A, MDmesh V Power MOSFETMax247FeaturesVDSS Order code RDS(on) max ID@TjMAXSTY112N65M5 710 V
Datasheet: STW77N65M5 , STW7N95K3 , STW7NK90Z , STW8NK80Z , STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , IRFB4110 , STY130NF20D , STY140NS10 , STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T .
History: BL4N80-D | VBL1104N | AP01N40J-HF | AOY2610E | DMG4822SSD | S15H12S | 7N65L-TN3-R
Keywords - STY112N65M5 MOSFET datasheet
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History: BL4N80-D | VBL1104N | AP01N40J-HF | AOY2610E | DMG4822SSD | S15H12S | 7N65L-TN3-R
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