All MOSFET. STY140NS10 Datasheet

 

STY140NS10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STY140NS10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 450 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: MAX247

 STY140NS10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STY140NS10 Datasheet (PDF)

 ..1. Size:257K  st
 sty140ns10.pdf

STY140NS10 STY140NS10

STY140NS10N-CHANNEL 100V - 0.009 - 140A MAX247MESH OVERLAY POWER MOSFETTYPE VDSS RDS(on) IDSTY140NS10 100V

 9.1. Size:782K  st
 sty145n65m5.pdf

STY140NS10 STY140NS10

STY145N65M5N-channel 650 V, 0.012 typ., 138 A, MDmesh V Power MOSFET in Max247 packageDatasheet preliminary dataFeaturesVDSS Order code@TJmax RDS(on) max IDSTY145N65M5 710 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P2804HVG

 

 
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