STY30NK90Z Datasheet and Replacement
Type Designator: STY30NK90Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 852 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: MAX247
STY30NK90Z substitution
STY30NK90Z Datasheet (PDF)
sty30nk90z.pdf
STY30NK90ZN-channel 900V - 0.21 - 26A - Max247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID pWSTY30NK90Z 900V
sty30na50.pdf
STY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTY30NA50 500 V
Datasheet: STW8NK80Z , STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , STY112N65M5 , STY130NF20D , STY140NS10 , IRFB4115 , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G .
History: AK2N60S | STD35NF3LLT4 | IXTT140N10P | SSF2341E | TPC8105-H | DH160P04D | CSD18503Q5A
Keywords - STY30NK90Z MOSFET datasheet
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History: AK2N60S | STD35NF3LLT4 | IXTT140N10P | SSF2341E | TPC8105-H | DH160P04D | CSD18503Q5A
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