STY80NM60N Datasheet and Replacement
Type Designator: STY80NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 447 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 455 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: MAX247
STY80NM60N substitution
STY80NM60N Datasheet (PDF)
sty80nm60n.pdf
STY80NM60NN-channel 600 V, 0.030 , 74 A, MDmesh II Power MOSFETMax247FeaturesVDSS @ Type RDS(on) max IDTJmaxSTY80NM60N 650 V
Datasheet: STW9NK90Z , STY112N65M5 , STY130NF20D , STY140NS10 , STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , 7N65 , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG .
History: 2SK4144-AZ | IRL3714L | AUIRFS3107-7P | TPCS8209 | UPA2728GR | CPC5602 | AP9972AGR-HF
Keywords - STY80NM60N MOSFET datasheet
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History: 2SK4144-AZ | IRL3714L | AUIRFS3107-7P | TPCS8209 | UPA2728GR | CPC5602 | AP9972AGR-HF
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