STY80NM60N Specs and Replacement
Type Designator: STY80NM60N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 447 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 455 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: MAX247
STY80NM60N substitution
- MOSFET ⓘ Cross-Reference Search
STY80NM60N datasheet
sty80nm60n.pdf
STY80NM60N N-channel 600 V, 0.030 , 74 A, MDmesh II Power MOSFET Max247 Features VDSS @ Type RDS(on) max ID TJmax STY80NM60N 650 V ... See More ⇒
Detailed specifications: STW9NK90Z, STY112N65M5, STY130NF20D, STY140NS10, STY30NK90Z, STY60NK30Z, STY60NM50, STY60NM60, IRF630, STZ150NF55T, BSB012N03LX3G, BSB012NE2LX, BSB014N04LX3G, BSB015N04NX3G, BSB017N03LX3G, BSB019N03LXG, BSB024N03LXG
Keywords - STY80NM60N MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BS250FTC | BSC060P03NS3EG | SWB16N65K
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