STY80NM60N Datasheet and Replacement
Type Designator: STY80NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 447 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 74 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 455 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: MAX247
- MOSFET Cross-Reference Search
STY80NM60N Datasheet (PDF)
sty80nm60n.pdf
STY80NM60NN-channel 600 V, 0.030 , 74 A, MDmesh II Power MOSFETMax247FeaturesVDSS @ Type RDS(on) max IDTJmaxSTY80NM60N 650 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF298L | SUD80460E | 2N4118A
Keywords - STY80NM60N MOSFET datasheet
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History: AOTF298L | SUD80460E | 2N4118A
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